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D45H11G

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HD45H11

PNPEPITAXIALPLANARTRANSISTOR

Description TheHD45H11isdesignedforvariousspecificandgeneralpurposeapplications,suchas:outputanddriverstagesofamplifiersoperatingatfrequenciesfromDCtogreaterthan1MHz;series,shuntandswitchingregulators;lowandhighfrequencyinverters/converters;andmanyothers.

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HI45H11

PNPEPITAXIALPLANARTRANSISTOR

Description TheHI45H11isdesignedforvariousspecificandgeneralpurposeapplications,suchas:outputanddriverstagesofamplifiersoperatingatfrequenciesfromDCtogreaterthan1MHz;series,shuntandswitchingregulators;lowandhighfrequencyinverters/converters;andmanyothers.

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HJ45H11

PNPEPITAXIALPLANARTRANSISTOR

Description TheHJ45H11isdesignedforvariousspecificandgeneralpurposeapplications,suchas:outputanddriverstagesofamplifiersoperatingatfrequenciesfromDCtogreaterthan1MHz;series,shuntandswitchingregulators;lowandhighfrequencyinverters/converters;andmanyothers.

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

KSE45H11

GeneralPurposePowerSwitchingApplications

GeneralPurposePowerSwitchingApplications •LowCollector-EmitterSaturationVoltage:VCE(sat)=-1V(MAX)@-8A •FastSwitchingSpeeds •ComplementtoKSE44H

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KSE45H11

iscSiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage :V(BR)CEO=-80V(Min) ·HighDCCurrentGain :hFE=60(Min)@(VCE=-1V,IC=-2A) ·LowSaturationVoltage- :VCE(sat)=-1.0V(Max)@(IC=-8A,IB=-0.4A) ·ComplementtoTypeKSE44H11 ·MinimumLot-to-Lotvariationsforrobustdevice performance

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

KSE45H11TU

GeneralPurposePowerSwitchingApplications

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KSH45H11

GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplicationsD-PAKforSurfaceMountApplications

Description General-purposepowerandswitchingsuchasoutputordriverstagesinapplicationsD-PAKforsurfacemountapplications. Features •LeadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularKSE45H •FastSwitchi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KSH45H11

PNPEpitaxialSiliconTransistor

Description General-purposepowerandswitchingsuchasoutputordriverstagesinapplicationsD-PAKforsurfacemountapplications. Features •LeadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularKSE45H •FastSwitchi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KSH45H11

iscSiliconPNPPowerTransistor

DESCRIPTION •Leadformedforsurfacemountapplications(NOsuffix) •Straightlead(IPAK,“-I”suffix) •ElectricallysimilartopopularKSE45H •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

产品属性

  • 产品编号:

    NJVMJD45H11RLG

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 系列:

    Automotive, AEC-Q101

  • 包装:

    散装

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    1V @ 400mA,8A

  • 电流 - 集电极截止(最大值):

    10µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    60 @ 2A,1V

  • 频率 - 跃迁:

    40MHz

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 供应商器件封装:

    DPAK

  • 描述:

    TRANS PNP 80V 8A DPAK

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
24+
DPAK-3
2176
原厂订货渠道,支持BOM配单一站式服务
询价
原厂原包
24+
原装
38560
原装进口现货,工厂客户可以放款。17377264928微信同
询价
ON/安森美
1830+
NA
1800
询价
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
三年内
1983
只做原装正品
询价
ON/安森美
22+
NA
20000
深圳原装现货正品有单价格可谈
询价
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
ON
23+
TO252
50000
全新原装正品现货,支持订货
询价
ON(安森美)
6000
询价
ON/安森美
22+
TO-252
6000
十年配单,只做原装
询价
更多NJVMJD45H11RLG供应商 更新时间2025-5-16 11:41:00