PNP EPITAXIAL PLANAR TRANSISTOR

Description The HJ45H11 is designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz;series, shunt and switching regulators; low and high frequency inverters/converters; and many others.

文件：23.02 Kbytes 页数：2 Pages

HSMC

华昕

PNP EPITAXIAL PLANAR TRANSISTOR

Description\nThe HJ45H11 is designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz;series, shunt and switching regulators; low and high frequency inverters/converters; and many others.

HSMC

华昕

Bipolar Transistor

UTC

友顺

General Purpose Power Switching Applications

General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage: VCE(sat) = -1V (MAX)@-8A • Fast Switching Speeds • Complement to KSE44H

文件：40.86 Kbytes 页数：4 Pages

Fairchild

仙童半导体

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 60(Min)@ (VCE= -1V, IC= -2A) ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -8A, IB= -0.4A) ·Complement to Type KSE44H11 ·Minimum Lot-to-Lot variations for robust device performance

文件：302.79 Kbytes 页数：2 Pages

ISC

无锡固电

General Purpose Power Switching Applications

文件：46.34 Kbytes 页数：4 Pages

Fairchild

仙童半导体