IGBT 650V 35A FS2 太阳能/UPS

This Insulated Gate Bipolar Transistor (IGBT) features a robust and\ncost effective Field Stop II Trench construction, and provides superior\nperformance in demanding switching applications, offering both low\non state voltage and minimal switching loss. The IGBT is well suited\nfor UPS and solar ap • Extremely Efficient Trench with Field Stop Technology\n• TJmax = 175°C\n• Soft Fast Reverse Recovery Diode\n• Optimized for High Speed Switching\n• 5µs Short−Circuit Capability;

ONSEMI

安森美半导体

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

文件：231.34 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

文件：231.34 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT - Field Stop II

文件：99.28 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH/FS 650V 70A TO247

ONSEMI

安森美半导体