2.3 GHz POWER OSCILLATOR TRANSISTOR

DESCRIPTION AND APPLICATIONS The NEX2300 series is an NPN transistor using NECs advanced Stepped Electrode Transistor (SET) structure with emitter ballasting resistors. The Pt-Si/Ti/Au metallization system assures optimum reliability. The series is provided in grounded collector hermetic packages

文件：119.56 Kbytes 页数：3 Pages

NEC

瑞萨

2.3 GHz POWER OSCILLATOR TRANSISTOR

DESCRIPTION AND APPLICATIONS The NEX2300 series is an NPN transistor using NECs advanced Stepped Electrode Transistor (SET) structure with emitter ballasting resistors. The Pt-Si/Ti/Au metallization system assures optimum reliability. The series is provided in grounded collector hermetic packages

文件：119.56 Kbytes 页数：3 Pages

NEC

瑞萨

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

文件：21.35 Kbytes 页数：2 Pages

NTE

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

文件：164.21 Kbytes 页数：8 Pages

RFMD

威讯联合

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.

文件：257.32 Kbytes 页数：12 Pages

PHI

PHI