N-CHANNEL GaAs MESFET

DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic

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NEC

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N-CHANNEL GaAs MESFET

3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit. To

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RENESAS

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3W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION\nThe NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the device ha • High Output Power : Po (1 dB) = +34.0 dBm typ.\n• High Efficiency : 30 % typ.\n• Input and Output Internally Matched for Optimum performance ;

Renesas

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X, Ku-Band Internally Matched FET

DESCRIPTION The FLM1011-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES • High Output Power

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EUDYNA

CHO-STRAP INSULATED GROUND STRAP

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