45 W L, S-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the co

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NEC

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N-CHANNEL GaAs MES FET

45 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power (CW) with high linear gain, high e

文件：184.7 Kbytes 页数：10 Pages

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N-CHANNEL GaAs MES FET

50 W L-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power (CW) with high linear gain, high eff

文件：179.92 Kbytes 页数：10 Pages

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瑞萨

50 W L-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primar

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NEC

瑞萨

N-CHANNEL GaAs MES FET

70 W L, S-BAND PUSH-PULL POWER GaAs MES FET FEATURES • Push-pull type N-channel GaAs MES FET • VDS = 12.0 V operation • High output power: Pout = 70 W TYP. • High linear gain: GL = 11.0 dB TYP. • High power added efficiency: hadd = 40 TYP. @ VDS = 12.0 V, IDset = 5.0 A (total), f = 2.20 GH

文件：182.3 Kbytes 页数：10 Pages

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GaAs FET 45 W L, S-BAND SINGLE-END POWER GaAs FET

DESCRIPTION The NES1823S-45 is a 45 W single-end type GaAs FET designed for high power transmitter applications for WCDMA (IMT-2000) base station systems. It operates at 12 V and is capable of delivering 45 W of output power (CW) with high linear gain, high efficiency and low distortion. Its pr

文件：239.18 Kbytes 页数：10 Pages

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瑞萨

GaAs FET 45 W L, S-BAND SINGLE-END POWER GaAs FET

DESCRIPTION The NES1823S-45 is a 45 W single-end type GaAs FET designed for high power transmitter applications for WCDMA (IMT-2000) base station systems. It operates at 12 V and is capable of delivering 45 W of output power (CW) with high linear gain, high efficiency and low distortion. Its pr

文件：239.18 Kbytes 页数：10 Pages

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GaAs FET 90 W L, S-BAND SINGLE-END POWER GaAs FET

DESCRIPTION The NES1823S-90 is a 90 W single-end type GaAs FET designed for high power transmitter applications for IMT- 2000 base station systems. It is capable of delivering 90 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condition of 12.0 V

文件：242.92 Kbytes 页数：10 Pages

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Safety Modules Emergency Stop and Safety Gate Types NES02D, NES13D

文件：113.62 Kbytes 页数：4 Pages

CARLOGAVAZZI

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Safety Modules Emergency Stop and Safety Gate Types NES02D, NES13D

文件：113.62 Kbytes 页数：4 Pages

CARLOGAVAZZI

佳乐