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NES1823M-180-A

GaAs FET 180 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION TheNES1823M-180isa180Wpush-pulltypeGaAsFETdesignedforhighpowertransmitterapplicationsforIMT- 2000basestationsystems.Itoperatesat12Vandiscapableofdelivering180Wofoutputpower(CW)withhigh lineargain,highefficiencyandlowdistortion.Itsprimary

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NES1823M-240

GaAs FET 240 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION TheNES1823M-240isa240Wpush-pulltypeGaAsFETdesignedforhighpowertransmitterapplicationsforIMT- 2000basestationsystems.Itoperatesat12Vandiscapableofdelivering240Wofoutputpower(CW)withhigh lineargain,highefficiencyandlowdistortion.Itsprimary

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NES1823M-240-A

GaAs FET 240 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION TheNES1823M-240isa240Wpush-pulltypeGaAsFETdesignedforhighpowertransmitterapplicationsforIMT- 2000basestationsystems.Itoperatesat12Vandiscapableofdelivering240Wofoutputpower(CW)withhigh lineargain,highefficiencyandlowdistortion.Itsprimary

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NES1823M-45

GaAs FET 45 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION TheNES1823M-45isa45Wpush-pulltypeGaAsFETdesignedforhighpowertransmitterapplicationsforIMT- 2000,PCS,andPDCbasestationsystems.Itiscapableofdelivering45Wofoutputpower(CW)withhighlinear gain,highefficiencyandexcellentdistortionunderthecondit

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NES1823P-100

100W L-BAND PUSH-PULL POWER GaAs MESFET

DESCRIPTION TheNES1823P-100isa100Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsforIMT-2000andPCS/PCNbasestationsystems.Itiscapableofdelivering100wattsofoutputpowerwithhighlineargain,highefficiencyandexcellentdistortion.Itsprimaryban

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NES1823P-100

N-CHANNEL GaAs MESFET

100WL-BANDPUSH-PULLPOWERGaAsMESFET DESCRIPTION TheNES1823P-100isa100Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsfor IMT-2000andPCS/PCNbasestationsystems.Itiscapableofdelivering100wattsofoutputpowerwithhighlinear gain,highefficie

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NES1823P-140

140 W L, S-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION TheNES1823P-140isa140Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsforPCS,DCS,PHSandIMT2000basestationsystems.Itiscapableofdelivering140Wofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortionunderthe

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NES1823P-140

N-CHANNEL GaAs MES FET

140WL,S-BANDPUSH-PULLPOWERGaAsMESFET DESCRIPTION TheNES1823P-140isa140Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplications forPCS,DCS,PHSandIMT2000basestationsystems.Itiscapableofdelivering140Wofoutputpower(CW)with highlineargain,

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NES1823P-30

30 W L-S BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION TheNES1823P-30isa30Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsforPCS,DCSandIMT2000basestationsystems.Itiscapableofdelivering30wattsofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortion.Itsprimary

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NES1823P-30

N-CHANNEL GaAs MES FET

30WL-SBANDPUSH-PULLPOWERGaAsMESFET DESCRIPTION TheNES1823P-30isa30Wpush-pulltypeGaAsMESFETdesignedforhighpowertransmitterapplicationsfor PCS,DCSandIMT2000basestationsystems.Itiscapableofdelivering30wattsofoutputpower(CW)withhighlinear gain,high

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    NES1

  • 制造商:

    LAMBDA

  • 制造商全称:

    DENSEI-LAMBDA

  • 功能描述:

    DIN rail mountable type 30 ~ 240W

供应商型号品牌批号封装库存备注价格
NEC
24+
94
询价
NEC
23+
原厂包装
9365
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
LAMBDA
23+
NA
25060
只做进口原装,终端工厂免费送样
询价
PHI
6000
面议
19
PLCC
询价
NEC
24+
220
现货供应
询价
Carlo Gavazzi- Inc.
2022+
1
全新原装 货期两周
询价
NEC
23+
TO-59
8510
原装正品代理渠道价格优势
询价
CARLO
20+
继电器
96
就找我吧!--邀您体验愉快问购元件!
询价
NEC
1923+
原厂封装
8600
莱克讯原厂货源每一片都来自原厂原装现货薄利多
询价
Carlo
22+
NA
65
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询价
更多NES1供应商 更新时间2025-7-19 10:04:00