GaAs FET 180 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT- 2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power (CW) with high linear gain, high efficiency and low distortion. Its primary

文件：287.57 Kbytes 页数：13 Pages

RENESAS

瑞萨

GaAs FET 240 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT- 2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power (CW) with high linear gain, high efficiency and low distortion. Its primary

文件：299.36 Kbytes 页数：13 Pages

RENESAS

瑞萨

GaAs FET 240 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT- 2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power (CW) with high linear gain, high efficiency and low distortion. Its primary

文件：299.36 Kbytes 页数：13 Pages

RENESAS

瑞萨

GaAs FET 45 W L, S-BAND PUSH-PULL POWER GaAs FET

DESCRIPTION The NES1823M-45 is a 45 W push-pull type GaAs FET designed for high power transmitter applications for IMT- 2000, PCS, and PDC base station systems. It is capable of delivering 45 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condit

文件：200.72 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-CHANNEL GaAs MESFET

100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficie

文件：265.63 Kbytes 页数：22 Pages

RENESAS

瑞萨

100W L-BAND PUSH-PULL POWER GaAs MESFET

DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary ban

文件：154.62 Kbytes 页数：20 Pages

NEC

瑞萨

140 W L, S-BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the

文件：47.6 Kbytes 页数：8 Pages

NEC

瑞萨

N-CHANNEL GaAs MES FET

140 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power (CW) with high linear gain,

文件：183.91 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-CHANNEL GaAs MES FET

30 W L-S BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear gain, high

文件：188.32 Kbytes 页数：10 Pages

RENESAS

瑞萨

30 W L-S BAND PUSH-PULL POWER GaAs MES FET

DESCRIPTION The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary

文件：51.62 Kbytes 页数：8 Pages

NEC

瑞萨