| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NE5550234 | Silicon Power MOS FET FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MH 文件：1.18243 Mbytes 页数：16 Pages | RENESAS 瑞萨 | RENESAS | |
NE5550234 | Silicon Power MOS FET 文件：2.501 Mbytes 页数：15 Pages | CEL | CEL | |
NE5550234 | Silicon Power MOS FET 文件：1.34104 Mbytes 页数：16 Pages | RENESAS 瑞萨 | RENESAS | |
NE5550234 | Silicon Power MOS FET FEATURES\n• High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)\n• High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)\n• High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)\n• High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)\n• High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dB; | Renesas 瑞萨 | Renesas | |
Silicon Power MOS FET FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 68 TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) • High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MH 文件：1.18243 Mbytes 页数：16 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon Power MOS FET 文件：1.34104 Mbytes 页数：16 Pages | RENESAS 瑞萨 | RENESAS | ||
RF & Microwave device 文件：137.58 Kbytes 页数：2 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon Power MOS FET 文件：2.501 Mbytes 页数：15 Pages | CEL | CEL | ||
Silicon Power MOS FET 文件：1.34104 Mbytes 页数：16 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon Power MOS FET 文件：1.34104 Mbytes 页数：16 Pages | RENESAS 瑞萨 | RENESAS |
详细参数
- 型号：
NE5550234
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
Silicon Power MOS FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
20+ |
SOT-89 |
120000 |
原装正品 可含税交易 |
询价 | ||
RENESAS/瑞萨 |
2025+ |
SOT-89 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
RENESAS/瑞萨 |
24+ |
SOT89 |
98000 |
原装现货假一罚十 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT-89 |
26260 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
RENESAS/瑞萨 |
22+ |
SOT89 |
20000 |
只做原装 |
询价 | ||
NEC |
2447 |
SOT-89 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
CEL |
25+ |
射频元件 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
NEC/RENESAS |
23+ |
SOT-89 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
25+ |
SOT-89 |
10000 |
原装现货假一罚十 |
询价 | ||
NEC/RENESAS |
18+ |
SOT-89 |
2531 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
相关规格书
更多- NE5550234-EV04-A
- NE5550979A-A
- NE555DE4
- NE555DR
- NE555DRG4
- NE555PE4
- NE555PSRE4
- NE555PW
- NE555PWG4
- NE555PWRE4
- NE555S-13
- NE556DBR
- NE556N
- NE556NSR
- NE570DG
- NE57814DD,518
- NE592D14G
- NE592D8G
- NE592D8R2G
- NE6510179A-T1
- NE662M04-A
- NE664M04-A
- NE678M04-A
- NE68019-A
- NE68030-A
- NE68033-T1B-A
- NE68039R-T1-A
- NE68119-T1-A
- NE68133-A
- NE68139R-T1
- NE68519-A
- NE68719-T1
- NE696M01-T1
- NE-76
- NE-83
- NE85619-A
- NE85630-A
- NE85630-T1-A
- NE85633-T1B-A
- NE85634-A
- NE85639-A
- NE856M02-T1-AZ
- NE8FAH-0
- NE8FAV-SD
- NE8FAVYK
相关库存
更多- NE5550234-EV09-A
- NE555D
- NE555DG4
- NE555DRE4
- NE555P
- NE555PSR
- NE555PSRG4
- NE555PWE4
- NE555PWR
- NE555PWRG4
- NE556D
- NE556DR
- NE556NE4
- NE-56
- NE570DR2G
- NE5920
- NE592D14R2G
- NE592D8R2G
- NE650R479A-T1
- NE651R479A-T1
- NE662M04-T2-A
- NE664M04-T2-A
- NE678M04-T2-A
- NE68019-T1-A
- NE68033-A
- NE68039R-T1
- NE68119-A
- NE68130-T1-A
- NE68133-T1B-A
- NE68139-T1-A
- NE68519-T1-A
- NE68730-T1
- NE696M01-T1-A
- NE80532EE056512S-L8TJ
- NE-84
- NE85619-T1-A
- NE85630-R25-A
- NE85633L-A
- NE85633-T1B-R25-A
- NE85634-T1-A
- NE85639-T1-A
- NE8FAH
- NE8FAV
- NE8FAV-Y110
- NE8FAV-YK
