HETERO JUNCTION FIELD EFFECT TRANSISTOR

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr

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X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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HETERO JUNCTION FIELD EFFECT TRANSISTOR

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr

文件：415.03 Kbytes 页数：9 Pages

CEL

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) • Micr

文件：415.04 Kbytes 页数：9 Pages

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Package：4-SMD，扁平引线；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF HFET 12GHZ 2V 10MA S02

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