| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NDT90N04 | N-Channel Trench Power MOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | |
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=2.8mΩMAX.(VGS=10V,ID=45A) ●LowCiss:Ciss=4700pFTYP.(VDS=25V) ●Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP90N04PUFisN-channelMOSFieldEffect Transistordesignedforhighcurrentswitching applications. FEATURES •Channeltemperature175°Crating •Superlowon-stateresistance RDS(on)=3.0mΩMAX.(VGS=10V,ID=45A) •LowCiss: | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP90N04VDGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Logiclevel •Superlowon-stateresistance RDS(on)1=4.0mΩMAX.(VGS=10V,ID=45A) RDS(on)2=8.6mΩMAX.(VGS=4.5V,ID=35A) •Highcurrentra | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
40V–90A–N-channelPowerMOSFETApplication:Automotive Features Superlowon-stateresistance RDS(on)=2.8mMAX.(VGS=10V,ID=45A) LowCiss:Ciss=3900pFTYP.(VDS=25V) Logicleveldrivetype DesignedforautomotiveapplicationandAEC-Q101qualified | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
ProductScoutAutomotive | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
1709+ |
SOT-223 |
32500 |
普通 |
询价 | ||
FAIRCHILD/仙童 |
SOT-223 |
25699 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
FAIRCHILD |
2023+ |
SOT223 |
50000 |
原装现货 |
询价 | ||
muRataPs |
2017+ |
DIP |
21458 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
MURATA/村田 |
22+ |
DIPSIP |
90000 |
百分百原装正品 价格优势 |
询价 | ||
Murata |
1941+ |
N/A |
909 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
Murata |
22+ |
NA |
909 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
MURATA/村田 |
20+ |
DIPSIP |
52628 |
进口原装现货/价格优势 |
询价 | ||
MURATA-村田 |
24+25+/26+27+ |
车规-电源模块 |
3280 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
MURATA/村田 |
23+ |
DIP |
943 |
只做原装正品现货!或订货假一赔十! |
询价 |
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