碳化硅（SiC）肖特基二极管 – EliteSiC 50A 1200V D3 TO-247-2L封装

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next gen • Max Junction Temperature\n• Tj = 175 °C\n• Avalanche Rated\n• 380 mJ\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery;

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安森美半导体

Package：TO-247-2；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODE GEN2.0 1200V TO

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安森美半导体

丝印：DSH50120C；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

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安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• No Reverse Recovery / No Forward Recovery\n• Low Vf @ TJ:175 °C;

ONSEMI

安森美半导体