NDSH20120CDN中文资料Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L数据手册ONSEMI规格书

描述 Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

特性 Features

• Max Junction Temperature 175 °C
• Avalanche Rated 95 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• No Reverse Recovery / No Forward Recovery
• Low Vf @ TJ:175 °C

应用 Application

• Industrial