NDS9933A数据手册TI中文资料规格书

描述 Description

General Description
SO-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored
to minimize on-state resistance and provide superior switching performance.These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where
fast switching, low in-line power loss, and resistance to transients are needed.

特性 Features

-2.7 A, -20 V. RDS(ON) = 0.14 W @ VGS = -4.5 V
                   RDS(ON) = 0.19 W @ VGS = -2.7 V
                  RDS(ON) = 0.2 W @ VGS = -2.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.