首页 >NDS9952ANL>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
3MTMSingleCoatedMedicalPlasticTape | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | ||
Electronic,2C#16StrTC,PVC-NYLIns,OATCBrd,PVCJkt ProductDescription Electronic,2Conductor16AWG(19x29)TinnedCopper,PVC-NYLInsulation,OverallTinnedCopperBraid(90)Shield,PVCOuterJacket | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
Cat5eUTPPatchCable | ASSMANNASSMANN WSW COMPONENTS ASSMANN WSW组件有限公司 | ASSMANN | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
AdvancedPlanarTechnologyLowOn-Resistance Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLowOn-Resistance Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ■30V,3.7A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor N-channel:VOLTAGE30VoltsCURRENT3.7Ampere P-channel:VOLTAGE30VoltsCURRENT2.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
PowerMOSFET(Vdss=-30V) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ULTRALOWONRESISTANCE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NSC |
07+ |
SOP8 |
5000 |
询价 | |||
原厂 |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
询价 | ||
FAIRCHILD |
08+ |
SOP8 |
3300 |
全新原装现货100真实自己公司 |
询价 | ||
F |
24+ |
SO-8 |
5000 |
只做原装公司现货 |
询价 | ||
FAIRCHILD |
1742+ |
SOP-8 |
98215 |
只要网上有绝对有货!只做原装正品! |
询价 | ||
FSC |
18+ |
SOP-8 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
VB |
2019 |
SO-8 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
FAIRCHILD |
20+ |
SOP-8 |
63258 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FAIRCHILD/仙童 |
2021+ |
SOP-8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ON/安森美 |
SOP8 |
265209 |
假一罚十原包原标签常备现货! |
询价 |
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