Sample-and-hold amplifier

DESCRIPTION The NE5537 monolithic sample-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device is pin-compatible with the LF198, and features superior performance in droop rate an

文件：103.95 Kbytes 页数：8 Pages

PHI

飞利浦

Sample-and-hold amplifier

DESCRIPTION\nThe NE5537 monolithic sample-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device is pin-compatible with the LF198, and features superior performance in droop rate and ou •Operates from ±5V to ±18V supplies\n•Hold leakage current 6pA @ TJ= 25°C\n•Less than 4µs acquisition time\n•TTL, PMOS, CMOS compatible logic input\n•0.5mV typical hold step at CH=0.01µF\n•Low input offset: 1MV (typical)\n•0.002% gain accuracy with RL=2kΩ\n•Low output noise in hold mode\n•Input ;

恩XP

Sample-and-hold amplifier

DESCRIPTION The NE5537 monolithic sample-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device is pin-compatible with the LF198, and features superior performance in droop rate an

文件：103.95 Kbytes 页数：8 Pages

PHI

飞利浦

Entry single-socket Product

文件：1.93228 Mbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Sample-and-hold amplifier

DESCRIPTION The NE5537 monolithic sample-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device is pin-compatible with the LF198, and features superior performance in droop rate an

文件：103.95 Kbytes 页数：8 Pages

PHI

飞利浦