isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.5A@ TC=25℃ ·Drain Source Voltage -VDSS=1500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =10.5Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel Power MOSFET

文件：377.85 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件：377.85 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N 沟道功率 MOSFET，1500V，2.5A，10.5Ω

The 1500V HV MOSFET \"NDFP03N150C\", with low on resistance and high speed switching, contributes to low power consumption and high efficiency of the industrial equipment-related applications which require HV power supplies. • Avalanche guarantee\n• Most condition of SMPS\n• High speed switching and Low loss\n• Realize low power consumption and high efficiency\n• On-Resistance rDS(on) = 8Ω (typ.)\n• Input Capacitance Ciss = 650pF (typ.)\n• 10V Drive;

ONSEMI

安森美半导体