isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.42mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.11 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

文件：386.52 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.42mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.51 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

文件：386.52 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件：386.52 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，250V，10A，420mΩ

This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize input capacitance and gate charge. This devices is suitable for applications with low gate charge driving requirements. • High Speed Switching\n• Reduces dynamic power losses\n• ESD Diode-Protected Gate\n• ESD resistance\n• Low Gate Charge\n• Ease of drive, faster turn-on\n• 100% Avalanche Tested\n• Voltage overstress safeguard\n• Pb-Free, Halogen Free and RoHS Compliance\n• Environment friendliness;

ONSEMI

安森美半导体