isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.1 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET 500 V, 3.3 

文件：124.45 Kbytes 页数：8 Pages

ONSEMI

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N-Channel 650V (D-S)Power MOSFET

文件：1.0755 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID= 2.6A@ TC=25℃ Drain Source Voltage -VDSS= 500V(Min) Static Drain-Source On-Resistance -RDS(on) = 3.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.61 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET 500 V, 3.3 

文件：124.45 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N-Channel 650V (D-S)Power MOSFET

文件：1.07551 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件：1.07623 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Power MOSFET 500 V, 3.3 

文件：124.45 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 500V 2.6A 3.3 Ohm Single N-Channel DPAK

Power MOSFET 500V 3.3 Ohm Single N-Channel • Low ON Resistance\n• 100% Avalanche Tested\n• These Devices are PbFree and RoHS Compliant;

ONSEMI

安森美半导体