Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and

文件：284.59 Kbytes 页数：13 Pages

FAIRCHILD

仙童半导体

Dual N & P-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and

文件：284.59 Kbytes 页数：13 Pages

FAIRCHILD

仙童半导体

N- and P-Channel 60V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：595.68 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

丝印：01CK；Package：SOT23-6；N- and P-Channel 60 V (D-S) MOSFET

APPLICATIONS Replace Digital Transistor, Level-Shifter Power Supply Converter Circuits Battery Operated Systems

文件：1.51844 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：.01；Package：TSOT-23-6；Field Effect Transistor - Dual, N & P-Channel, Enhancement Mode

文件：363.11 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

双 N 和 P 沟道增强型场效应晶体管，60V

双N&P沟道逻辑电平增强模式场效应晶体管采用了飞兆半导体专有的高单元密度、DMOS技术。 这一密度非常高的工艺是专为最大限度地降低通态电阻，提供稳固和可靠的性能以及快速开关而定制的。 此类器件特别适合低压、低电流、开关和电源应用。 •Q1： 0.51A，60V\n•Q2： -0.34A，60V\n•高饱和电流\n•采用高密度单元设计，可实现极低的RDS(ON)。\n•专有SuperSOTTM-6封装设计采用铜引脚架构，以获得出色的热性能和电气性能;

ONSEMI

安森美半导体