LDO Regulator, 100 mA, 18V, 1 A IQ, with PG

文件：1.044079 Mbytes 页数：12 Pages

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LDO Regulator, 100 mA, 18 V, 1 uA IQ, with PG

The NCV8711 device is based on unique combination of features −\nvery low quiescent current, fast transient response and high input and\noutput voltage ranges. The NCV8711 is CMOS LDO regulator\ndesigned for up to 18 V input voltage and 100 mA output current.\nQuiescent current of only 1 uA makes th • Operating Input Voltage Range: 2.7 V to 18 V\n• Output Voltage: 1.2 V to 17 V\n• Capable of Sourcing 140 mA Peak Output Current\n• Low Shutdown Current: 100 nA typ.\n• Very Low Quiescent Current: 1 uA typ.\n• Low Dropout: 215 mV typ. at 100 mA\n• Output Voltage Accuracy ±1%\n• Power Good Outpu;

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丝印：GGC；Package：TSOP-5；LDO Regulator, 100 mA, 18V, 1 A IQ, with PG

文件：1.044079 Mbytes 页数：12 Pages

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安森美半导体

丝印：GGD；Package：TSOP-5；LDO Regulator, 100 mA, 18V, 1 A IQ, with PG

文件：1.044079 Mbytes 页数：12 Pages

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安森美半导体

丝印：GGE；Package：TSOP-5；LDO Regulator, 100 mA, 18V, 1 A IQ, with PG

文件：1.044079 Mbytes 页数：12 Pages

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安森美半导体

丝印：GGA；Package：TSOP-5；LDO Regulator, 100 mA, 18V, 1 A IQ, with PG

文件：1.044079 Mbytes 页数：12 Pages

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安森美半导体

丝印：GC；Package：WDFNW6；LDO Regulator, 100 mA, 18V, 1 A IQ, with PG

文件：1.044079 Mbytes 页数：12 Pages

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安森美半导体

丝印：GD；Package：WDFNW6；LDO Regulator, 100 mA, 18V, 1 A IQ, with PG

文件：1.044079 Mbytes 页数：12 Pages

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安森美半导体

丝印：GE；Package：WDFNW6；LDO Regulator, 100 mA, 18V, 1 A IQ, with PG

文件：1.044079 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：GA；Package：WDFNW6；LDO Regulator, 100 mA, 18V, 1 A IQ, with PG

文件：1.044079 Mbytes 页数：12 Pages

ONSEMI

安森美半导体