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NCV8412

Self-Protected Low Side Driver with In-Rush Current Management

The NCV8412 is a three terminal protected Low−Side Smart Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. The device also offers fault indication via the gate pin. This devi

文件:351.13 Kbytes 页数:19 Pages

ONSEMI

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NCV8412

Self-Protected Low Side Driver with In-Rush Current Management

文件:207.67 Kbytes 页数:14 Pages

ONSEMI

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NCV8412

Self-Protected Low Side Driver with In-Rush Current Management

The NCV8412 is a three terminal protected Low−Side Smart Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. The device also offers fault indication via the gate pin. This device is • Short Circuit Protection with In-Rush Current Management\n• Best in class RSC performance\n• Thermal Shutdown with Automatic Restart\n• Higher reliability and damage prevention\n• Delta Thermal Shutdown\n• Higher reliability and damage prevention\n• Overvoltage Protection\n• Protection against hig;

ONSEMI

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NCV8412_V01

Self-Protected Low Side Driver with In-Rush Current Management

The NCV8412 is a three terminal protected Low−Side Smart Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. The device also offers fault indication via the gate pin. This devi

文件:351.13 Kbytes 页数:19 Pages

ONSEMI

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NCV84120

Self Protected Very Low Iq High Side Driver with Analog Current Sense

The NCV84120 is a fully protected single channel high side driver that can be used to switch a wide variety of loads, such as bulbs, solenoids, and other actuators. The device incorporates advanced protection features such as active inrush current management, over−temperature shutdown with aut

文件:496.8 Kbytes 页数:27 Pages

ONSEMI

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NCV84120DR2G

丝印:84120;Package:SOIC-8;Self Protected Very Low Iq High Side Driver with Analog Current Sense

The NCV84120 is a fully protected single channel high side driver that can be used to switch a wide variety of loads, such as bulbs, solenoids, and other actuators. The device incorporates advanced protection features such as active inrush current management, over−temperature shutdown with aut

文件:496.8 Kbytes 页数:27 Pages

ONSEMI

安森美半导体

NCV8412ADDR2G

丝印:8412AD;Package:SOIC-8;Self-Protected Low Side Driver with In-Rush Current Management

The NCV8412 is a three terminal protected Low−Side Smart Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. The device also offers fault indication via the gate pin. This devi

文件:351.13 Kbytes 页数:19 Pages

ONSEMI

安森美半导体

NCV8412ASTT1G

丝印:8412A;Package:SOT-223;Self-Protected Low Side Driver with In-Rush Current Management

The NCV8412 is a three terminal protected Low−Side Smart Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. The device also offers fault indication via the gate pin. This devi

文件:351.13 Kbytes 页数:19 Pages

ONSEMI

安森美半导体

NCV8412ASTT3G

丝印:8412A;Package:SOT-223;Self-Protected Low Side Driver with In-Rush Current Management

The NCV8412 is a three terminal protected Low−Side Smart Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. The device also offers fault indication via the gate pin. This devi

文件:351.13 Kbytes 页数:19 Pages

ONSEMI

安森美半导体

NCV8412D

Self-Protected Low Side Driver with In-Rush Current Management

The NCV8412 is a three terminal protected Low−Side Smart Discrete FET. The protection features include Delta Thermal Shutdown, overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. The device also offers fault indication via the gate pin. This devi

文件:351.13 Kbytes 页数:19 Pages

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • V(BR)DSS Min (V):

    42

  • ID Typ (A):

    3.9

  • rDS(on) Max (mΩ):

    200

  • PD Max (W):

    2.2

  • Package Type:

    SOT-223-4/TO-261-4D

供应商型号品牌批号封装库存备注价格
ON Sem
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
ON
23+
SOT-223
50000
全新原装正品现货,支持订货
询价
ON/安森美
23+
SOP-8
25025
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON/安森美
20+
SOP-8
120000
只做原装 可免费提供样品
询价
ON
21+
SOT-223
4000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON(安森美)
23+
标准封装
8000
正规渠道,只有原装!
询价
ON/安森美
22+
24000
原装正品现货,实单可谈,量大价优
询价
ON/安森美
22+
SOIC-8
14760
原装正品
询价
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
onsemi(安森美)
24+
SOT2234
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
更多NCV8412供应商 更新时间2025-12-1 18:00:00