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NCV57000

Isolated High Current IGBT Gate Driver

NCV57000isahigh−currentsinglechannelIGBTdriverwith internalgalvanicisolation,designedforhighsystemefficiencyand reliabilityinhighpowerapplications.Itsfeaturesinclude complementaryinputs,opendrainFAULTandReadyoutputs,active Millerclamp,accurateUVLOs,DESATprot

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV57000

隔离式高电流和高能效IGBT栅极驱动器,内部电隔离; • High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages\n• Improves system efficiency\n• Short Propagation Delays with Accurate Matching\n• Improves PWM signal integrity\n• DESAT with Soft Turn Off\n• Protection against overload and short circuits\n• Active Miller Clamp and Negative Gate Voltage\n• Prevents spurious gate turn-on\n• High Transient & Electromagnetic Immunity\n• Ruggedness in fast slew rate high voltage and high current switching applications\n• 5 kV Galvanic Isolation\n• Galvanic isolation to separate high voltage and low voltage sides to provide safety and protection\n;

NCV57000 is a high−current single channel IGBT driver with internal\ngalvanic isolation, designed for high system efficiency and reliability\nin high power applications. Its features include complementary inputs,\nopen drain FAULT and Ready outputs, active Miller clamp, accurate\nUVLOs, DESAT protection, soft turn-off at DESAT, and separate high\nand low (OUTH and OUTL) driver outputs for system design\nconvenience. NCV57000 accommodates both 5V and 3.3V signals on\nthe input side and wide bias voltage range on the driver side including\nnegative voltage capability. NCV57000 provides > 5 kVrms (UL1577\nrating) galvanic isolation and > 1200 Viorm (working voltage)\ncapabilities. NCV57000 is available in the wide-body SOIC-16 package\nwith guaranteed 8 mm creepage distance between input and output to\nfulfill reinforced safety insulation requirements.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV57000

Isolated High Current IGBT Gate Driver

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV57000_V01

Isolated High Current IGBT Gate Driver

NCV57000isahigh−currentsinglechannelIGBTdriverwith internalgalvanicisolation,designedforhighsystemefficiencyand reliabilityinhighpowerapplications.Itsfeaturesinclude complementaryinputs,opendrainFAULTandReadyoutputs,active Millerclamp,accurateUVLOs,DESATprot

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV57000DWR2G

Isolated High Current IGBT Gate Driver

NCV57000isahigh−currentsinglechannelIGBTdriverwith internalgalvanicisolation,designedforhighsystemefficiencyand reliabilityinhighpowerapplications.Itsfeaturesinclude complementaryinputs,opendrainFAULTandReadyoutputs,active Millerclamp,accurateUVLOs,DESATprot

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV57000DWR2G

Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation.; • High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages\n• Improves system efficiency\n• Short Propagation Delays with Accurate Matching\n• Improves PWM signal integrity\n• DESAT with Soft Turn Off\n• Protection against overload and short circuits\n• Active Miller Clamp and Negative Gate Voltage\n• Prevents spurious gate turn-on\n• High Transient & Electromagnetic Immunity\n• Ruggedness in fast slew rate high voltage and high current switching applications\n• 5 kV Galvanic Isolation\n• Galvanic isolation to separate high voltage and low voltage sides to provide safety and protection\n;

NCV57000 is a high−current single channel IGBT driver with internal\ngalvanic isolation, designed for high system efficiency and reliability\nin high power applications. Its features include complementary inputs,\nopen drain FAULT and Ready outputs, active Miller clamp, accurate\nUVLOs, DESAT protection, soft turn-off at DESAT, and separate high\nand low (OUTH and OUTL) driver outputs for system design\nconvenience. NCV57000 accommodates both 5V and 3.3V signals on\nthe input side and wide bias voltage range on the driver side including\nnegative voltage capability. NCV57000 provides > 5 kVrms (UL1577\nrating) galvanic isolation and > 1200 Viorm (working voltage)\ncapabilities. NCV57000 is available in the wide-body SOIC-16 package\nwith guaranteed 8 mm creepage distance between input and output to\nfulfill reinforced safety insulation requirements.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV57000D

Isolated High Current IGBT Gate Driver

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCV57000DWR2G

Isolated High Current IGBT Gate Driver

ONSEMION Semiconductor

安森美半导体安森美半导体公司

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Power Switch:

    IGBT

  • Number of Outputs:

    1

  • Topology:

    Single

  • Isolation Type:

    Galvanic Isolation

  • Vin Max (V):

    5.5

  • VCC Max (V):

    24

  • Drive Source/Sink Typ (mA):

    6000/6000

  • Rise Time (ns):

    10

  • Fall Time (ns):

    15

  • tp Max (ns):

    90

  • Package Type:

    SOIC-16W

供应商型号品牌批号封装库存备注价格
ON(安森美)
2447
16-SOIC
115000
1000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
onsemi(安森美)
2021+
SOIC-16
645
询价
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
80000
询价
ON
24+
SOP16
10000
询价
ON
19+17+
SOP16
460
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON
23+
SOP16
460
正规渠道,只有原装!
询价
ON
2022+
SOIC-16W
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ON/安森美
24+
SOP16
1000
清仓价出货假一赔百只做原装
询价
ON/安森美
22+
SOIC-16
2500
原装正品
询价
更多NCV57000供应商 更新时间2025-7-30 15:01:00