3A 超低导通电阻和控制负载开关，带自动放电路径

The NCV451A is a very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy.\nIndeed, due to a current consumption optimization with NMOS structure, leakage currents are eliminated by isolating connected IC on the battery when not used.\ • DC Current Up to 3A\n• 21mΩ N MOSFET from 3.6V to 5.5V\n• Output Auto-Discharge\n• DFNW6 2.2 x 2 mm, 0.65 pitch\n• 0,75V - 5.5V Operating Range;

ONSEMI

安森美半导体

Package：6-VDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR SWITCH N-CHANNEL 1:1 6DFN

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：226.48 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance

文件：227.12 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance

文件：227.12 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体