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NCP51705

Single 6 A High-Speed, Low-Side SiC MOSFET Driver

The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losse

文件:465.1 Kbytes 页数:23 Pages

ONSEMI

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NCP51705

Single 6 A High-Speed, Low-Side SiC MOSFET Driver

文件:406.83 Kbytes 页数:21 Pages

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NCP51705

SiC MOSFET下桥驱动器,单个6A高速

The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are • High Peak Output Current with Split Output Stages\n• Allow independent Turn−ON/Turn−OFF Adjustment\n• Extended Positive Voltage Rating up to 28 V Max\n• Efficient SiC MOSFET Operation during the Conduction Period\n• User−adjustable Built−in Negative Charge Pump (-3.3 V to -8 V)\n• Fast Turn−off an;

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NCP51705_V01

Single 6 A High-Speed, Low-Side SiC MOSFET Driver

The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losse

文件:465.1 Kbytes 页数:23 Pages

ONSEMI

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NCP51705MNTXG

Single 6 A High-Speed, Low-Side SiC MOSFET Driver

The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losse

文件:465.1 Kbytes 页数:23 Pages

ONSEMI

安森美半导体

NCP51705MNTXG

Single 6 A High-Speed, Low-Side SiC MOSFET Driver

文件:406.83 Kbytes 页数:21 Pages

ONSEMI

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NCP51705MNTXG

Package:24-VFQFN 裸露焊盘;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:集成电路(IC) 栅极驱动器 描述:IC GATE DRVR LOW-SIDE 24QFN

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NCP51705SMDGEVB

包装:散装 功能:栅极驱动器 类别:开发板,套件,编程器 评估板 - 扩展板,子卡 描述:APPLICATION DAUGHTER-CARD FOR NC

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技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Power Switch:

    SiC MOSFET

  • Number of Outputs:

    1

  • Topology:

    Single

  • Isolation Type:

    Non-Isolated

  • Vin Max (V):

    N/A

  • VCC Max (V):

    28

  • Drive Source/Sink Typ (mA):

    6000/6000

  • Rise Time (ns):

    8

  • Fall Time (ns):

    8

  • tp Max (ns):

    50

  • Package Type:

    WQFN-24

供应商型号品牌批号封装库存备注价格
三年内
1983
只做原装正品
询价
ON
25+
QFN
30000
代理全新原装现货,价格优势
询价
ON Semiconductor
24+
-
65200
一级代理/放心采购
询价
ON(安森美)
2447
TO-252-3
115000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
ON
24+
NA
3000
进口原装 假一罚十 现货
询价
onsemi(安森美)
2021+
TO-252-3
499
询价
ONSEMI
24+
NA
10000
询价
ON Semiconductor
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ON/安森美
22+
QFN-24
3500
原装正品
询价
ON
22+
6000
代理原装正品
询价
更多NCP51705供应商 更新时间2026-3-16 15:08:00