NCEP85T14

30-250V N-Channel SGT-I MOSFET;

The NCEP85T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP85T14WD

Super Trench MOSFET; • V DS =85V,I D =140AR DS(ON) <4.0m? @ V GS =10V• Excellent gate charge x R DS(on) product(FOM)• Very low on-resistance R DS(on)• 175 °C operating temperature• Pb-free lead plating• 100% UIS tested;

The NCEP85T14WD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switching and synchronous rectification.

NCEP85T14D

30-250V N-Channel SGT-I MOSFET;

NCF1027P065G

ON
DIP

ON

NCK2910AHN/10203

NXP
QFN

恩XP