30-250V N-Channel SGT-I MOSFET

The NCEP85T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching • VDS =85V,ID =110ARDS(ON) <6mΩ @ VGS=10V• Excellent gate charge x RDS(on) product(FOM)• Very low on-resistance RDS(on)• 175 °C operating temperature• Pb-free lead plating• 100% UIS tested;

NCEPower

新洁能

丝印：NCEP85T11M；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

文件：1.00386 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：NCEP85T11M；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

文件：990.26 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

Super Trench MOSFET

NCEPower

新洁能

Super Trench MOSFET

NCEPower

新洁能