30-250V N-Channel SGT-I MOSFET

The NCEP60T12Auses SuperTrench technology that isuniquely optimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses are minimized due to anextremely low combination of RDS(ON) and Qg. This deviceis ideal for high-frequency switching and s • VDS=60V,ID =120ARDS(ON) < 4.0mΩ@ VGS=10V  (Typ:3.4mΩ)RDS(ON) < 5.0mΩ@ VGS=4.5V  (Typ:4.0mΩ)• Excellent gate charge x RDS(on)product• Very low on-resistance RDS(on)• 175 °Coperatingtemperature• Pb-free lead plating•100% UIS tested;

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30-250V N-Channel SGT-I MOSFET

The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switc • V DS =60V,I D =120AR DS(ON) < 4.0m? @ V GS =10V (Typ:3.5m?)R DS(ON) < 5.0m? @ V GS =4.5V (Typ:4.0m?)• Excellent gate charge x R DS(on) product• Very low on-resistance R DS(on)• 175 °C operating temperature• Pb-free lead plating• 100% UIS tested;

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丝印：NCEP60T12AK；Package：TO-252-2L；NCE N-Channel Super Trench Power MOSFET

Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

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30-250V N-Channel SGT-I MOSFET

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