30-250V N-Channel SGT-I MOSFET

The NCEP6080AG uses Super Trench technology that is uniquely optimized toprovide the most efficient high frequency switching performance. Bothconduction and switching power losses are minimized due to an extremely lowcombination of RDS(ON) and Qg. This device is ideal forhigh-frequency switching and • VDS=60V,ID =80ARDS(ON) < 4.0mΩ@ VGS=10V  (Typ:3.5mΩ)RDS(ON) < 5.0mΩ@ VGS=4.5V  (Typ:4.0mΩ)• Excellent gate charge x RDS(on)product• Very low on-resistanceRDS(on)• 150 °C operatingtemperature• Pb-free leadplating•100% UIS tested;

NCEPower

新洁能

28-CH PPI Module

文件：299.17 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

CONSTANT CURRENT LED DRIVER with PWM CONTROL

文件：154.34 Kbytes 页数：8 Pages

NJRC

日本无线

Silicon Schottky Barrier Rectifier

Description: The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guard–Ring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature ● Guaranteed Reverse Avalanche ● Low Power Loss/Hig

文件：19.95 Kbytes 页数：2 Pages

NTE