30-250V N-Channel SGT-I MOSFET

The NCEP4045GU uses Super Trench technology that is uniquely optimized to provide the most efficient highfrequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg . This device is ideal for high-frequency switching • V DS =40V,I D =45AR DS(ON) =6.0mΩ (typical) @ V GS =10VR DS(ON) =8.5mΩ (typical) @ V GS =4.5V• Excellent gate charge x R DS(on) product(FOM)• Very low on-resistance R DS(on)• 150 °C operating temperature• Pb-free lead plating• 100% UIS tested;

NCEPower

新洁能

Rectifier diodes Schottky barrier

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PHI

PHI

General Purpose Rectifier

Features: □ Standard and Reverse Polarities with Color Coded Seals □ High Surge Current Ratings □ Electrical Selection for Parallel and Series Operation Applications □ Welders □ Battery Chargers □ Electrochemical Refining □ Metal Reduction □ General Industrial High Current Rectification

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POWEREX

POWER SCHOTTKY RECTIFIERS

DESCRIPTION Dual center tap Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged either in SOT-93 or TO-247 this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. FEATURES AN

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STMICROELECTRONICS

意法半导体