30-250V N-Channel SGT-I MOSFET

The NCEP3045GU uses Super Trench technology that is uniquely optimized to provide the most efficient highfrequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switchi • V DS =30V,I D =45AR DS(ON) =5.8mΩ (typical) @ V GS =10VR DS(ON) =8.0mΩ (typical) @ V GS =4.5V• Excellent gate charge x R DS(on) product(FOM)• Very low on-resistance R DS(on)• 150 °C operating temperature• Pb-free lead plating• 100% UIS tested;

NCEPower

新洁能

Rugged Environment Connector

文件：1.19468 Mbytes 页数：2 Pages

AMPHENOL

安费诺

Rugged Environment Connector

文件：1.19468 Mbytes 页数：2 Pages

AMPHENOL

安费诺

Optoisolator Silicon NPN Darlington Phototransistor Output

Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d

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NTE