30-250V N-Channel SGT-I MOSFET

The NCEP01T30T uses Super Trench technology that is uniquely optimized toprovide the most efficient high frequency switching performance. Bothconduction and switching power losses are minimized due to an extremely lowcombination of RDS(ON) and Qg. This device is ideal forhigh-frequency switching and • VDS=100V,ID =300ARDS(ON) <2.1mΩ@ VGS=10V• Excellent gate charge x RDS(on)product• Very low on-resistance RDS(on)• 175 °Coperatingtemperature• Pb-free lead plating•100% UIS tested;

NCEPower

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NCE N-Channel Super Trench Power MOSFET

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NCEPOWER

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NCE/新洁能
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NCE/新洁能

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NCE(无锡新洁能)
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NCE(无锡新洁能)

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NCE/新洁能
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NCE/新洁能

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