30-250V N-Channel SGT-I MOSFET

The NCEP01T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching • VDS =100V,ID =129ARDS(ON) <5.0mΩ @ VGS=10V• Excellent gate charge x RDS(on) product• Very low on-resistance RDS(on)• 175 °C operating temperature• Pb-free lead plating• 100% UIS tested;

NCEPower

新洁能

30-250V N-Channel SGT-I MOSFET

NCEPower

新洁能

TO-220

NCE/新洁能

上传：深圳市芯峰微电子科技有限公司

TO-263

NCE(无锡新洁能)

上传：深圳市信科顺电子有限公司

TO-263

NCE/新洁能

上传：深圳市拓亿芯电子有限公司