30-250V N-Channel SGT-I MOSFET

The NCEP0178 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switchin • V DS =100V,I D =78AR DS(ON) <8.5m? @ V GS =10V• Excellent gate charge x R DS(on) product(FOM)• Very low on-resistance R DS(on)• 175 °C operating temperature• Pb-free lead plating• 100% UIS tested;

NCEPower

新洁能

N-Channel 100-V (D-S) MOSFET

文件：991.41 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：NCEP0178A；Package：TO-220-3L；LCE N-Channel Super Trench Power MOSFET

文件：984.62 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：NCEP0178A；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

文件：1.15214 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

30-250V N-Channel SGT-I MOSFET

The NCEP0178A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switchi • V DS =100V,I D =78AR DS(ON) =7.2m?(typical) @ V GS =10VR DS(ON) =9.5m?(typical) @ V GS =4.5V• Excellent gate charge x R DS(on) product(FOM)• Very low on-resistance R DS(on)• 175 °C operating temperature• Pb-free lead plating• 100% UIS tested;

NCEPower

新洁能

30-250V N-Channel SGT-I MOSFET

NCEPower

新洁能