30-120V N-Channel SGT-II MOSFET

NCEPower

新洁能

MOSFET ??Power, Single N-Channel 100 V, 14 m, 46 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS016N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：152.88 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 100 V, 14 m, 46 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

文件：228.62 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 100 V, 14 m, 46 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

文件：228.62 Kbytes 页数：6 Pages

ONSEMI

安森美半导体