30-250V N-Channel SGT-I MOSFET

The NCEP0140AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switch • V DS =100V,I D =45AR DS(ON) =18m? (typical) @ V GS =10VR DS(ON) =22m? (typical) @ V GS =4.5V• Excellent gate charge x R DS(on) product(FOM)• Very low on-resistance R DS(on)• 150 °C operating temperature• Pb-free lead plating• 100% UIS tested;

NCEPower

新洁能

Liquid Crystal Display Module

文件：707.73 Kbytes 页数：10 Pages

NEWHAVEN

Schottky Barrier Diode

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ONSEMI

安森美半导体

SCHOTTKY BARRIER DIODE

SCHOTTKY BARRIER DIODE These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand-held and portable applications where spac

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PANJIT

強茂