NCE N-Channel Enhancement Mode Power MOSFET

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丝印：NCE75H35TC；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features ● VDSS =75V,ID =350A RDS(ON)

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N沟道 MOSFET

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12-200V N-Channel Trench MOSFET

\n The NCE75H35TC uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in automotive applications and a wide variety of other applications. \n• V DSS =75V,I D =350A\nR DS(ON) < 2.2m? @ V GS =10V （Typ：1.7 m?）\n• Good stability and uniformity with high E AS\n• Special process technology for high ESD capability\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Excellent package for good;

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