丝印：NCE6990D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =69V,ID =90A RDS(ON)

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NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

\n The NCE6990D uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =69V,I D =90A\nR DS(ON) < 7.2m? @ V GS =10V (Typ:6.2m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ;

NCEPower

新洁能

Inductors National?셲 150 KHz SIMPLE SWITCHER

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FILTRAN

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Dual 30V N-Channel PowerTrench SyncFET

General Description The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky dio

文件：86.9 Kbytes 页数：6 Pages

Fairchild

仙童半导体

Dual N-Channel Logic Level PowerTrenchTM MOSFET

文件：119.4 Kbytes 页数：5 Pages

Fairchild

仙童半导体