丝印：NCE6890K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 68V,ID =90A RDS(ON)

文件：429.77 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE6890K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 68V,ID =90A RDS(ON)

文件：429.77 Kbytes 页数：7 Pages

NCEPOWER

新洁能