丝印：60NP2012K；Package：TO-252-4L；NCE N&P-Channel complementary Power MOSFET

Description The NCE60NP2012K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =20A RDS(ON)

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NCEPOWER

新洁能

Complementary MOSFET

\n The NCE60NP2012K uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. N-channel\n• VDS =60V,I D =20A\nRDS(ON) <35m? @ VGS =10V\nRDS(ON) <40m? @ VGS =4.5V\nP-channel\n• VDS =-60V,ID =-12A\nRDS(ON) <100m? @ VGS =-10V\nRDS(ON) <125m? @ VGS =-4.5V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uni;

NCEPower

新洁能

SOT23

新洁能

上传：深圳市粤骏腾电子科技有限公司

TO-252

NCE Power/新洁能

上传：深圳市宝芯创电子有限公司

SOT-223-3L

新洁能

上传：上海闻业电子科技有限公司