丝印：NCE6050A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6050A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON)

文件：698.16 Kbytes 页数：7 Pages

NCEPOWER

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N-Channel 60-V (D-S) MOSFET

文件：979.26 Kbytes 页数：7 Pages

VBSEMI

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12-200V N-Channel Trench MOSFET

\n The NCE6050A uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =60V,I D =50A\nR DS(ON) <20m? @ V GS =10V\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high ESD capability;

NCEPower

新洁能

High-speed diode

DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage:

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PHI

PHI

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

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TECCOR

Silicon Switching Diode

Silicon Switching Diode ● For high-speed switching applications

文件：99.22 Kbytes 页数：4 Pages

SIEMENS

西门子