Dual N and P-Channel MOSFET

\n The NCE4618SP uses advanced trench technology to provide excellent R SS(ON) , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V V GS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facili \n• V SSS =20V,I S =6A\n• 2.5V drive\n• Common-drain type\n• 2KV HBM;

NCEPower

新洁能

NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：323.22 Kbytes 页数：6 Pages

NCEPOWER

新洁能

75 Ohm BNC Female Connector Solder Attachment 4 Hole Flange Turret Terminal, .531 inch Hole Spacing

文件：280.03 Kbytes 页数：2 Pages

PASTERNACK

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

文件：277.86 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

文件：276.4 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司