NCE3N150T

Marking：TO-247；Package：NCE3N150T；N-Channel Enhancement Mode Power MOSFET

GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications

STFV3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STFW3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF

STFW3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET

STFW3N150

N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages

Features •100avalanchetested •IntrinsiccapacitancesandQgminimized •Highspeedswitching •FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications •Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STFW3N150

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpower

STP3N150

N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages

Features •100avalanchetested •IntrinsiccapacitancesandQgminimized •Highspeedswitching •FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications •Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STP3N150

iscN-ChannelMOSFETTransistor

STP3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF

STP3N150

N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET