丝印：NCE3030K；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

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NCEPOWER

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丝印：NCE3030K；Package：TO-252-2L；LCE N-Channel Enhancement Mode Power MOSFET

文件：936.6 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：NCE3030K；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：937.64 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

12-200V N-Channel Trench MOSFET

\n The NCE3030K uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =30V,I D =30A\nR DS(ON) <14m? @ V GS =10V\nR DS(ON) <25m? @ V GS =4.5V\n• High density cell design for ultra low Rdson\n• Fully characterized Avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process techn;

NCEPower

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