12-200V N-Channel Trench MOSFET

\n The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：283.46 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel Enhancement Mode Power MOSFET

文件：261.42 Kbytes 页数：7 Pages

NCEPOWER

新洁能

Headset Detection Interface Interface

文件：81.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Headset Detection Interface Interface

文件：81.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体