Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：513.45 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：2007N；Package：SOT23-6L；N-Channel Enhancement Mode Power MOSFET

文件：350.71 Kbytes 页数：7 Pages

NCEPOWER

新洁能

Dual N and P-Channel MOSFET

The NCE2007N uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching application. • VDS = 20V,ID =6.5ARDS(ON) < 27m? @ VGS=2.5VRDS(ON) < 22m? @ VGS=4.5V• High power and current handing capability• Lead free product is acquired• Surface mount package;

NCEPower

新洁能

Dual N and P-Channel MOSFET

NCEPower

新洁能