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NCE2006NE

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件:513.47 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

NCE2006NE

NCE N-Channel Enhancement Mode Power MOSFET

文件:383.8 Kbytes 页数:7 Pages

NCEPOWER

新洁能

NCE2006NE

Dual N and P-Channel MOSFET

\n The NCE2006NE uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

NCEPower

新洁能

NCE2006Y

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2006Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =6A RDS(ON)

文件:318.65 Kbytes 页数:7 Pages

NCEPOWER

新洁能

NF2006A-UP

Single-phase 2-line General-purpose, Plastic housing

文件:61 Kbytes 页数:2 Pages

SOSHIN

双信电机

NMA-2006

NMA 2000 NOISE SOURCE SERIES

文件:180.46 Kbytes 页数:1 Pages

MICRONETICS

微盟电子

技术参数

  • Product status:

    Production

  • Package:

    SOT-23-6L

  • Polarity:

    N+N

  • BVDSS(V):

    20

  • ID(A):

    7

  • VTH(V):

    0.7

  • RDS(ON)@4.5VTyp(mΩ):

    13

  • RDS(ON)@4.5VMax(mΩ):

    18

  • RDS(ON)@2.5VTyp(mΩ):

    17

  • RDS(ON)@2.5VMax(mΩ):

    24

  • VGS(th)(V):

    ±10

  • CISS(pF):

    1150

  • QG(nC):

    15

  • PD(W):

    1.5

  • Specialfeature:

    ESD

供应商型号品牌批号封装库存备注价格
NCE
18+
SOT23-6
41200
原装正品,现货特价
询价
NCEPOWER
19+ROHS
SOT23-6
180000
原装正品现货,可开发票,假一赔十
询价
NCE新洁能
21+
SOT23-6L
25000
进口原装!长期供应!绝对优势价格(诚信经营
询价
NCE/新洁能
23+
SOT23-6L
50000
全新原装正品现货,支持订货
询价
VB
25+
SOT-23-6L
10000
原装现货假一罚十
询价
NCE/新洁能
2022+
SOT-23-6
3000
原厂代理 终端免费提供样品
询价
NCE/新洁能
23+
SOT23-6L
89630
当天发货全新原装现货
询价
NCE/新洁能
20+
SOT-23-6
300000
现货很近!原厂很远!只做原装
询价
NCE
23+
-
35375
华南总代
询价
NCE/新洁能
23+
SOT23-6L
12500
原装正品假一赔百
询价
更多NCE2006NE供应商 更新时间2022-6-12 10:12:00