丝印：NCE1805S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE1805S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =185V,ID =5A RDS(ON)

文件：336.55 Kbytes 页数：7 Pages

NCEPOWER

新洁能

12-200V N-Channel Trench MOSFET

NCEPower

新洁能

Integrated Circuit Recording Video Signal Processing Circuit

Description: The NTE1805 is an integrated circuit in a 28–Lead DIP type package designed for use in VCR recording video signal processing. Features: • Dynamic Emphasis Characteristics: 5.5dB (at f = 1MHz, input level = –20dB) • Built–In Carrier Interleaving Circuit • Built–In Low

文件：28.49 Kbytes 页数：3 Pages

NTE

HERMETIC TO-3 FIXED VOLTAGE REGULATORS APPROVED TO DESC DRAWINGS

DESCRIPTION These three terminal positive regulators are supplied in a hermetically sealed metal TO-3 package. All protective features are designed into the circuit, including thermal shutdown, current limiting and safe-area control. With heat sinking, they can deliver over 1.5 amps of output cur

文件：34.39 Kbytes 页数：4 Pages

IRF

HERMETIC SURFACE MOUNT FIXED VOLTAGE POSITIVE REGULATORS APPROVED TO DESC DRAWINGS

文件：30.01 Kbytes 页数：4 Pages

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