NCD57252中文资料隔离式双通道IGBT栅极驱动器数据手册ONSEMI规格书

描述 Description

NCD(V)57252/3/5/6 are high−current dual-channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side. The device accepts complementary inputs and offers separate pins for Disable and Dead Time control for system design convenience. Drivers are available in wide-body SOIC−16 and narrow-body SOIC−16 packages.

特性 Features

• High Peak Output Current (±6.5 A, ±3.5 A)
• Enables Removal of Buffer
• Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge Driver
• Design Flexibility
• Tight UVLO Thresholds on all Power Supplies
• Consistent Performance
• 3.3 V, 5 V, and 15 V Logic Input
• Design Flexibility
• 2.5 or 5 kVrms Galvanic Isolation from Input to each Output and 1.5 kVrms Differential Voltage between Output Channels
• Meets Safety Requirements
• Short Propagation Delays with Accurate Matching
• Faster Switching Capability
• Programmable Overlap or Dead Time controlProgrammable Overlap or Dead Time control
• Disable Pin to Turn Off Outputs for Power Sequencing
• ANB Function to Offer Flexibility to Set up the Driver asHalf−bridge Driver Operating with a Single Input Signal
• IGBT/MOSFET Gate Clamping during Short Circuit

应用 Application

• Automotive Applications
• Industrial Applications
• EV Chargers
• Uninterruptible Power Supplies (UPS)
• Industrial Power Supplies
• Solar Inverters
• Traction Inverters
• PLC Motor Control