NCD57000DWR2G中文资料Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation.数据手册ONSEMI规格书

描述 Description

NCD57000 is a high−current single channel IGBT driver with internal
galvanic isolation, designed for high system efficiency and reliability
in high power applications. Its features include complementary inputs,
open drain FAULT and Ready outputs, active Miller clamp, accurate
UVLOs, DESAT protection, soft turn-off at DESAT, and separate high
and low (OUTH and OUTL) driver outputs for system design
convenience. NCD57000 accommodates both 5V and 3.3V signals on
the input side and wide bias voltage range on the driver side including
negative voltage capability. NCD57000 provides > 5 kVrms (UL1577
rating) galvanic isolation and > 1200 Viorm (working voltage)
capabilities. NCD57000 is available in the wide-body SOIC-16 package
with guaranteed 8 mm creepage distance between input and output to
fulfill reinforced safety insulation requirements.

特性 Features

• High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages
• Improves system efficiency
• Short Propagation Delays with Accurate Matching
• Improves PWM signal integrity
• DESAT with Soft Turn Off
• Protection against overload and short circuits
• Active Miller Clamp and Negative Gate Voltage
• Prevents spurious gate turn-on
• High Transient & Electromagnetic Immunity
• Ruggedness in fast slew rate high voltage and high current switching applications
• 5 kV Galvanic Isolation
• Galvanic isolation to separate high voltage and low voltage sides to provide safety and protection

应用 Application

• Solar Inverters
• Motor Control
• UPS
• Industrial Power Supplies
• Welding

简介

NCD57000DWR2G属于集成电路（IC）的栅极驱动器。由制造生产的NCD57000DWR2G栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。