NCD57090中文资料Isolated High Current Gate Driver数据手册ONSEMI规格书

描述 Description

NCD57090A, NCD57090B, NCD57090C, NCD57090D,
NCD57090E and NCD57090F are high−current single channel IGBT
gate drivers with 5 kVrms internal galvanic isolation, designed for
high system efficiency and reliability in high power applications. The
devices accept complementary inputs and depending on the pin
configuration, offer options such as Active Miller Clamp
(NCD57090A/D/F), negative power supply (NCD57090B) and
separate high and low (OUTH and OUTL) driver outputs
(NCD57090C/E) for system design convenience. NCD57090
(A/B/C/D/E/F) accommodate wide range of input bias voltage and
signal levels from 3.3 V to 20 V. NCD57090 (A/B/C/D/E/F) are
available in wide−body SOIC−8 package.

特性 Features

• High Peak Output Current (+6.5 A/-6.5 A)
• Improves system efficiency
• Short Propagation Delays with Accurate Matching
• Improves PWM signal integrity
• High Transient & Electromagnetic Immunity
• Ruggedness in fast slew rate high voltage and high current switching applications
• 5 KVrms On-Chip Galvanic Isolation
• Saves cost and board space while offering improved performance compared to opto-drivers
• Wide Bias Voltage Ranges and Input Voltage Range
• Offers system design flexibility and allows the usage of commonly available system voltage rails
• Active Miller Clamp or Negative Gate Voltage or Split Outputs
• Offers a choice in selecting the right feature in a compact package

应用 Application

• UPS
• Motor Control
• Industrial Power Supplies
• HVAC
• Solar Inverters
• Industrial Motor Drives
• Data Center & Server Power Supplies
• Energy Storage and Charging Systems